Non-volatile memory device and method of operating the same

Details Non-volatile memory device and method of operating the same Non-volatile memory device and method of operating the same

2007-10-31

2011-11-08

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C977S754000

Reexamination Certificate

active

08054672

ABSTRACT:
Provided are a non-volatile memory device and a method of operating the non-volatile memory device. The non-volatile memory device includes a switching device and a storage node connected to the switching device, wherein the storage node comprises: a first electrode connected to the switching device; a chalcogenide material layer formed on the first electrode; and a second electrode formed on the chalcogenide material layer, and one of the first and second electrodes comprises an electrode contact layer formed adjacent to a limited region of the chalcogenide material layer, and a property of the electrode region adjacent to the chalcogenide material layer is changed reversibly according to the direction in which a current is applied, thereby changing between a high resistance state and a low resistance state.

REFERENCES:
patent: 5534711 (1996-07-01), Ovshinsky et al.
patent: 6795338 (2004-09-01), Parkinson et al.
patent: 2008/0273378 (2008-11-01), Philipp et al.

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