Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2008-06-13
2010-11-02
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S185220, C365S185050
Reexamination Certificate
active
07826277
ABSTRACT:
A non-volatile memory device is disclosed. The non-volatile memory device includes an encoder configured to set random data in a unit of a word line, and generate second data to be programmed in a memory cell by performing logic operation about the random data and first data inputted for program, and a data converting circuit configured to have a decoder for generating the first data by performing logic operation about the second data read from the memory cell and the random data.
REFERENCES:
patent: 7038946 (2006-05-01), Hosono et al.
patent: 2007/0211537 (2007-09-01), Park et al.
patent: 2009/0040826 (2009-02-01), Cha et al.
Chung Jun Seop
Kim You Sung
Shin Tae Ho
Yang Joong Seob
Hynix / Semiconductor Inc.
Nguyen Dang T
Townsend and Townsend / and Crew LLP
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