Non-volatile memory device and method of manufacturing the same

Details Non-volatile memory device and method of manufacturing the same Non-volatile memory device and method of manufacturing the same

2007-09-11

2011-11-01

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257SE29309, C257SE21423, C257SE21679, C438S287000

Reexamination Certificate

active

08049269

ABSTRACT:
In a non-volatile memory device, active fin structures extending in a first direction may be formed on a substrate. A tunnel insulating layer may be formed on surfaces of the active fin structures and bottom surfaces of trenches that may be defined by the active fin structures. A charge trapping layer and a blocking layer may be sequentially formed on the tunnel insulating layer. A gate electrode structure may include first portions disposed over top surfaces of the active fin structures and second portions vertically spaced apart from portions of the charge trapping layer that may be disposed over the bottom surfaces of the trenches, and may extend in a second direction substantially perpendicular to the first direction. Thus, lateral electron diffusion may be reduced in the charge trapping layer, and thereby the data retention performance and/or reliability of the non-volatile memory device may be improved.

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