Non-volatile memory device and method of manufacturing the same

Details Non-volatile memory device and method of manufacturing the same Non-volatile memory device and method of manufacturing the same

2007-03-19

2009-11-24

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S317000, C438S151000, C438S257000

Reexamination Certificate

active

07622761

ABSTRACT:
The non-volatile memory device may include a semiconductor substrate having a body and a pair of fins. A bridge insulating layer may non-electrically connect upper portions of the pair of fins to define a void between the pair of fins. Outer surfaces of the pair of fins are the surfaces of the pair of fins that do not face the void and inner surfaces of the pair of fins are the surfaces of the pair of fins that do face the void. The non-volatile memory device may further include at least one control gate electrode that may cover at least a portion of outer surfaces of the pair of fins, may extend over the bridge insulating layer, and may be isolated from the semiconductor substrate. At least one pair of gate insulating layers may be between the at least one control gate electrode and the pair of fins, and at least one pair of storage nodes may be between the at least one pair of gate insulating layers and the at least one control gate electrode.

REFERENCES:
patent: 6432812 (2002-08-01), May
patent: 6778441 (2004-08-01), Forbes et al.
patent: 7009272 (2006-03-01), Borger et al.
patent: 7061069 (2006-06-01), Mori et al.
patent: 7223678 (2007-05-01), Noble et al.
patent: 2004/0232496 (2004-11-01), Chen et al.
patent: 2005/0242391 (2005-11-01), She et al.
patent: 2005/0242406 (2005-11-01), Hareland et al.
patent: 2005/0253203 (2005-11-01), Liaw
patent: 1 923 908 (2008-05-01), None
patent: WO 03/096425 (2003-11-01), None
International search report dated Dec. 30, 2008, for counterpart Application No. 07103437.5.

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