Non-volatile memory device and method of forming the same

Details Non-volatile memory device and method of forming the same Non-volatile memory device and method of forming the same

2005-01-25

2005-01-25

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S239000, C257S261000, C257S298000, C257S316000, C257S317000, C257S320000, C257S321000, C438S201000, C438S211000, C438S216000, C438S241000, C438S257000, C438S260000

Reexamination Certificate

active

06847078

ABSTRACT:
A non-volatile memory device comprises an active region disposed in a predetermined region of a semiconductor substrate, a selection gate electrode crossing over the active region, and a floating gate electrode disposed on the active region parallel to the selection gate electrode and spaced apart from the selection gate electrode. The non-volatile memory device further comprises a tunnel insulating layer intervening between the active region and each of the selection gate electrode and the floating gate electrode, a separation insulating pattern intervening between the selection gate electrode and the floating gate electrode, an erasing gate electrode disposed over the floating gate electrode and crossing over the active region parallel to the selection gate electrode, and an erasing gate insulating layer intervening between the erasing gate electrode and the floating gate electrode. The selection gate electrode is formed without a photoresist pattern.

REFERENCES:
patent: 5422504 (1995-06-01), Chang et al.
patent: 5494838 (1996-02-01), Chang et al.
patent: 5943267 (1999-08-01), Sekariapuram et al.
patent: 6621115 (2003-09-01), Jenq et al.

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