Non-volatile memory device and method of fabricating the same

Details Non-volatile memory device and method of fabricating the same Non-volatile memory device and method of fabricating the same

2008-03-18

2008-03-18

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S359000, C438S391000

Reexamination Certificate

active

11444186

ABSTRACT:
A method of fabricating an a non-volatile memory includes forming trench isolation regions in an inactive region of a semiconductor substrate, adjacent trench isolation regions defining respective protrusions having rounded edges therebetween, wherein upper surfaces of the trench isolation regions are lower than an upper surface of the semiconductor substrate and wherein the protrusions define an active region, forming a tunnel insulating layer covering the protrusion of the semiconductor substrate, and forming, sequentially, a storage layer, a blocking insulating layer, and a gate layer covering the tunnel insulating layer.

REFERENCES:
patent: 6323107 (2001-11-01), Ueda et al.
patent: 6380583 (2002-04-01), Hsieh et al.
patent: 6720611 (2004-04-01), Jang
patent: 7227219 (2007-06-01), Mikolajick
patent: 2005/0009290 (2005-01-01), Yan et al.
patent: 2006/0220088 (2006-10-01), Ueno

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