Non-volatile memory device and method of fabricating the same

Details Non-volatile memory device and method of fabricating the same Non-volatile memory device and method of fabricating the same

2011-01-04

2011-01-04

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257SE29300, C257SE29309, C257SE21409, C257SE21180, C438S264000, C438S129000, C438S586000

Reexamination Certificate

active

07863672

ABSTRACT:
Provided are a non-volatile memory device that may expand to a stacked structure and may be more easily highly integrated and an economical method of fabricating the non-volatile memory device. The non-volatile memory device may include at least one semiconductor column. At least one first control gate electrode may be arranged on a first side of the at least one semiconductor column. At least one second control gate electrode may be arranged on a second side of the at least one semiconductor column. A first charge storage layer may be between the at least one first control gate electrode and the at least one semiconductor column. A second charge storage layer may be between the at least one second control gate electrode and the at least one semiconductor column.

REFERENCES:
patent: 2009/0180324 (2009-07-01), Ramaswamy et al.

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