Non-volatile memory device and method for forming

Details Non-volatile memory device and method for forming Non-volatile memory device and method for forming

2005-05-03

2005-05-03

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S315000

Reexamination Certificate

active

06887758

ABSTRACT:
A semiconductor device (10) has a highly doped layer (26) having a first conductivity type uniformly implanted into the semiconductor substrate (20). An oxide-nitride-oxide structure (36, 38, 40) is formed over the semiconductor substrate (20). A halo region (46) having the first conductivity type is implanted at an angle in only a drain side of the oxide-nitride-oxide structure and extends under the oxide-nitride-oxide structure a predetermined distance from an edge of the oxide-nitride-oxide structure. A source (52) and drain (54) having a second conductivity type are implanted into the substrate (20). The resulting non-volatile memory cell provides a low natural threshold voltage to minimize threshold voltage drift during a read cycle. In addition, the use of the halo region (46) on the drain side allows a higher programming speed, and the highly doped layer (26) allows the use of a short channel device.

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