Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-29
2010-12-14
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S216000, C438S287000, C257S324000, C257S325000, C257S326000, C257S314000, C257S298000, C257S295000, C257S296000, C257S297000, C257S349000, C257S547000, C257S620000, C257SE21423
Reexamination Certificate
active
07851285
ABSTRACT:
A method for fabricating a non-volatile memory device includes forming a charge tunneling layer composed of a hafnium silicate (HfSixOyNz) layer on a semiconductor substrate. A charge trapping layer composed of a hafnium oxide nitride (HfOxNy) layer is formed on the charge tunneling layer. A charge blocking layer composed of a hafnium oxide layer is formed on the charge trapping layer. A gate layer is formed on the charge blocking layer. A non-volatile memory device fabricated by the method is also disclosed.
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Hynix / Semiconductor Inc.
Singal Ankush k
Toledo Fernando L
Townsend and Townsend / and Crew LLP
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