Non-volatile memory device and method for fabricating the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S216000, C438S287000, C257S324000, C257S325000, C257S326000, C257S314000, C257S298000, C257S295000, C257S296000, C257S297000, C257S349000, C257S547000, C257S620000, C257SE21423

Reexamination Certificate

active

07851285

ABSTRACT:
A method for fabricating a non-volatile memory device includes forming a charge tunneling layer composed of a hafnium silicate (HfSixOyNz) layer on a semiconductor substrate. A charge trapping layer composed of a hafnium oxide nitride (HfOxNy) layer is formed on the charge tunneling layer. A charge blocking layer composed of a hafnium oxide layer is formed on the charge trapping layer. A gate layer is formed on the charge blocking layer. A non-volatile memory device fabricated by the method is also disclosed.

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