Non-volatile memory device and fabrication method thereof

Details Non-volatile memory device and fabrication method thereof Non-volatile memory device and fabrication method thereof

2011-01-11

2011-01-11

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S317000, C257S320000, C257S324000

Reexamination Certificate

active

07868371

ABSTRACT:
In one embodiment, a non-volatile memory device includes an isolation film defining an active region in a semiconductor substrate; a tunnel insulating film located on the active region; a control gate located on the isolation film; an inter-gate dielectric film parallel to the control gate and located between the control gate and the isolation film; an electrode overlapped by the control gate and the inter-gate dielectric film, wherein the electrode extends over the tunnel insulating film on the active region to form a floating gate; and a source region and a drain region formed in the active region on both sides of the floating gate.

REFERENCES:
patent: 2003/0015754 (2003-01-01), Fukumoto et al.
patent: 2004/0238873 (2004-12-01), Koo et al.
patent: 2003-031703 (2003-01-01), None
patent: 2004-356580 (2004-12-01), None
patent: 2004-0101657 (2004-12-01), None
patent: 2005-0095430 (2005-09-01), None
English language abstract of Japanese Publication No. 2003-031703.
English language abstract of Japanese Publication No. 2004-356580.
English language abstract of Korean Publication No. 2004-0101657.
English language abstract of Korean Publication No. 2005-0095430.

Affiliated with

Also associated with

Rating

Non-volatile memory device and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory device and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device and fabrication method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2660603