Non-volatile memory device and fabrication method

Details Non-volatile memory device and fabrication method Non-volatile memory device and fabrication method

2005-02-01

2005-02-01

Lee, Eddie (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S263000

Reexamination Certificate

active

06849506

ABSTRACT:
A non-volatile memory device includes a floating gate formed over a semiconductor substrate. At one end of the floating gate, there is a tapered protrusion having a horn-like or bird's beak shape. A control gate covers the floating gate except for the tapered protrusion. Sidewall spacers are formed adjacent to the floating gate and the control gate. An erasing gate is formed over the tapered protrusion of the floating gate.

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patent: 6130132 (2000-10-01), Hsieh et al.
patent: 6200864 (2001-03-01), Selcuk
patent: 6368976 (2002-04-01), Yamada
patent: 6414350 (2002-07-01), Hsieh et al.
patent: 20010016385 (2001-08-01), Chiang et al.

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