Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2008-01-25
2010-10-12
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S185030, C365S185220
Reexamination Certificate
active
07813188
ABSTRACT:
A method of programming a multi level cell in a non-volatile memory device includes providing different data to main cells and indicator cells. The main cells and indicator cells have different threshold voltages in accordance with the data. A program operation is performed on a main cell and an indicator cell. A first verifying operation is performed based on a first verifying voltage of the main cell and the indicator cell. The program operation and the first verifying operation are performed repeatedly until a threshold voltage of a first cell of the indicator cells is higher than the first verifying voltage. A second verifying operation is performed on the main cell based on a second verifying voltage when the threshold voltage of the first cell is higher than the first verifying voltage.
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patent: 1020060064856 (2006-06-01), None
Baek Kwang-Ho
Cha Jae-Won
Won Sam-Kyu
Hynix / Semiconductor Inc.
Nguyen Tuan T.
Townsend and Townsend / and Crew LLP
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