Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-13
2006-06-13
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C257S317000
Reexamination Certificate
active
07061044
ABSTRACT:
A non-volatile memory device comprises a gate line that includes a gate dielectric layer, a bottom gate pattern, an inter-gate dielectric and a top gate pattern, which are sequentially stacked. The width of the inter-gate dielectric is narrower than that of the bottom gate pattern.
REFERENCES:
patent: 4780431 (1988-10-01), Maggioni
patent: 5894146 (1999-04-01), Pio et al.
patent: 6221717 (2001-04-01), Cremonesi et al.
Chang Sung-Nam
Park Kyu-Charn
Shin Kwang-Shik
Dickey Thomas L.
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Tran Minhloan
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