Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2005-03-08
2005-03-08
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S229000, C365S185250
Reexamination Certificate
active
06865128
ABSTRACT:
A high-speed accessible non-volatile memory device including: a memory cell array which has a plurality of memory cells arranged in a row direction and a column direction, and a precharge voltage supply section. The memory cell has a source region, a drain region, a word gate and a select gate disposed to face a channel region provided between the source region and the drain region, and a non-volatile memory element formed between the word gate and the channel region. The precharge voltage supply section supplies a precharge voltage to all the word gates in the memory cell array during standby mode.
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Elms Richard
Nguyen N.
Oliff & Berridg,e PLC
Seiko Epson Corporation
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