Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2005-03-01

2005-03-01

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S317000, C257S322000, C257S324000, C438S257000, C438S266000

Reexamination Certificate

active

06861699

ABSTRACT:
The present invention includes a method of fabricating a non-volatile memory device having two transistors for two-bit operations to improve electron trapping efficiency and integration degree of the non-volatile memory device, and a method of driving the non-volatile memory device. The EEPROM device according to the present invention comprises a silicon substrate including a first and a second channel area, a first and a second conductive gate on the first and the second channel area, respectively, facing each other, a first and a second insulation layer in the bottom of the first and the second gate, and a first and a second junction area of a second conductive type between the first and the second channel area overlapping with the first and the second conductive gate.

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patent: 5768192 (1998-06-01), Eitan
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patent: 5910925 (1999-06-01), Guterman et al.
patent: 6057575 (2000-05-01), Jenq
patent: 6107141 (2000-08-01), Hsu et al.
patent: 6707079 (2004-03-01), Satoh et al.

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