Non-volatile memory cells including fin structures

Details Non-volatile memory cells including fin structures Non-volatile memory cells including fin structures

2008-08-18

2010-06-15

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29264, C257S314000, C257S315000

Reexamination Certificate

active

07737485

ABSTRACT:
A method of forming a non-volatile memory device may include forming a fin protruding from a substrate, forming a tunnel insulating layer on portions of the fin, and forming a floating gate on the tunnel insulting layer so that the tunnel insulating layer is between the floating gate and the fin. A dielectric layer may be formed on the floating gate so that the floating gate is between the dielectric layer and the fin, and a control gate electrode may be formed on the dielectric layer so that the dielectric layer is between the control gate and the fin. Related devices are also discussed.

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Notice to File a Response/Amendment to the Examination Report from Korean Intellectual Property Office for Application No. 1020040039024.

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