Non-volatile memory cells formed in back-end-of line processes

Details Non-volatile memory cells formed in back-end-of line processes Non-volatile memory cells formed in back-end-of line processes

2011-08-09

2011-08-09

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000, C257S321000, C257S324000, C257S326000, C257SE21209, C438S211000, C438S257000, C438S593000

Reexamination Certificate

active

07994564

ABSTRACT:
An integrated circuit device includes a substrate; a bottom electrode over the substrate wherein the bottom electrode is in or over a lowest metallization layer over the substrate; a blocking layer over the bottom electrode; a charge-trapping layer over the blocking layer; an insulation layer over the charge-trapping layer; a control gate over the insulation layer; a tunneling layer over the control gate; and a top electrode over the tunneling layer.

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