Non-volatile memory cell with ferroelectric capacitor having log

Details Non-volatile memory cell with ferroelectric capacitor having log Non-volatile memory cell with ferroelectric capacitor having log

1990-03-06

1991-08-06

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518901, G11C 1300

Patent

active

050383230

ABSTRACT:
The ferroelectric capacitor in each memory cell of an array has a logically nactive electrode plate maintained at a fixed voltage level and an opposed electrode plate coupled through a switching transistor, turned on by address signals, to a bit line through which the polarization of the capacitor is logically controlled to write and store binary logic data therein which is also readout through the same bit line at a different time during a logic restoring read operation. The ferroelectric material has sufficient conductivity to maintain the electrodes at nearly equal potentials.

REFERENCES:
patent: 2900622 (1959-08-01), Rajchman
patent: 3158842 (1964-11-01), Anderson
patent: 3401378 (1968-09-01), Bartlett et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4893272 (1990-01-01), Eaton, Jr. et al.

Affiliated with

Also associated with

Rating

Non-volatile memory cell with ferroelectric capacitor having log does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory cell with ferroelectric capacitor having log, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory cell with ferroelectric capacitor having log will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1992529