Non-volatile memory cell devices and methods

Details Non-volatile memory cell devices and methods Non-volatile memory cell devices and methods

2011-06-07

2011-06-07

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C257SE21180

Reexamination Certificate

active

07955935

ABSTRACT:
A method of fabricating a memory cell including forming nanodots over a first dielectric layer and forming an intergate dielectric layer over the nanodots, where the intergate dielectric layer encases the nanodots. To form sidewalls of the memory cell, a portion of the intergate dielectric layer is removed with a dry etch, where the sidewalls include a location where a nanodot has been deposited. A spacing layer is formed over the sidewalls to cover the location where a nanodot has been deposited and the remaining portion of the intergate dielectric layer and the nanodots can be removed with an etch selective to the intergate dielectric layer.

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