Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-02-27
2007-02-27
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185290
Reexamination Certificate
active
11038726
ABSTRACT:
A nonvolatile memory cell array having common drain lines and method of operating the same are disclosed. A positive voltage is applied to a gate of a selected cell and gates of memory cells that share a word line with the selected cell. A first voltage is applied to a drain of the selected cell and drains of the memory cells that share at least a drain line with the selected cell. A second voltage is applied to a source of the selected cell and sources of memory cells that share a bit line with the selected cell, the second voltage being less than the first voltage, such that electrons are injected into the charge storage region of the selected cell to program. A third voltage, which is higher than the second voltage, is applied to bit lines that are not connected to the selected cell.
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Bae Geum-Jong
Cho In-Wook
Kim Jin-Hee
Kim Ki-Chul
Kim Sang-Su
Hoang Huan
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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