Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-30
2006-05-30
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S299000, C438S266000
Reexamination Certificate
active
07052962
ABSTRACT:
A non-volatile memory cell incorporated in an integrated circuit is disclosed. The non-volatile memory cell comprises an access transistor; a floating gate transistor coupled to the access transistor; a tunneling capacitor formed between the source of the access transistor and the gate of the second transistor; and a coupling capacitor having a first plate associated with a gate of the floating gate transistor, the first plate being formed to minimize the gate to source capacitance of the floating gate transistor. A window is also created to reduce the capacitance of the tunneling capacitor and the gate to source capacitance of the floating gate transistor. A method of manufacturing this non-volatile memory cell is also disclosed.
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King John J.
Lebentritt Michael
Xilinx , Inc.
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