Non-volatile memory cell and fabricating method thereof and...

Details Non-volatile memory cell and fabricating method thereof and... Non-volatile memory cell and fabricating method thereof and...

2007-09-18

2007-09-18

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S593000

Reexamination Certificate

active

11223690

ABSTRACT:
A method of fabricating a non-volatile memory is provided. In the fabricating method, a plurality of stack gate structures is formed on a substrate and a plurality of doped regions is formed in the substrate beside the stack gate structures. Then, a plurality of spacers is formed on the sidewalls of the stack gate structures. After that, a plurality of conductive pad layers is formed on the exposed doped regions. By forming the conductive pad layers, the resistance of the doped region in each memory cell can be reduced.

REFERENCES:
patent: 2003/0143790 (2003-07-01), Wu
patent: 2005/0085029 (2005-04-01), Ding
patent: 2006/0160343 (2006-07-01), Chong et al.

Affiliated with

Also associated with

Rating

Non-volatile memory cell and fabricating method thereof and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory cell and fabricating method thereof and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory cell and fabricating method thereof and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3781220