Non-volatile memory and method of manufacturing floating gate

Details Non-volatile memory and method of manufacturing floating gate Non-volatile memory and method of manufacturing floating gate

2007-06-26

2007-06-26

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21179, C257SE21209

Reexamination Certificate

active

11461780

ABSTRACT:
A method of manufacturing a floating gate is provided. The method includes the steps of forming a tunneling layer on a substrate, and forming a film layer containing a semiconductor component on the tunneling layer. The film layer consists of a semiconductor film or nano-dots.

REFERENCES:
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patent: 7022571 (2006-04-01), Chang et al.
patent: 2002/0098653 (2002-07-01), Flagan et al.
patent: 2005/0072989 (2005-04-01), Bawendi et al.
patent: 2005/0074939 (2005-04-01), Ho et al.
patent: 2005/0112820 (2005-05-01), Chen et al.

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