Non-volatile memory and method of fabricating the same

Details Non-volatile memory and method of fabricating the same Non-volatile memory and method of fabricating the same

2006-05-16

2009-08-11

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S558000, C438S561000

Reexamination Certificate

active

07572691

ABSTRACT:
A method of fabricating a non-volatile memory is provided. First, two openings are formed on a substrate. A stacked gate structure comprising a first dielectric layer, a charge storage layer, a second dielectric layer and a first conductive layer is formed on the substrate between the two openings. A liner is formed on a bottom and a portion of a sidewall of the tow openings, wherein a top surface of the liner is lower than that of the substrate. A second conductive layer is formed on the liner at the bottom of the two openings, wherein a top surface of the second conductive layer is co-planar with that of the liner. A third conductive layer is formed on the second conductive layer and the liner, wherein a top surface of the third conductive layer is co-planar with that of the substrate and lower than that of the first dielectric layer.

REFERENCES:
patent: 5460987 (1995-10-01), Wen et al.
patent: 5668031 (1997-09-01), Hsue et al.
patent: 6458677 (2002-10-01), Hopper et al.
patent: 7352631 (2008-04-01), Burnett et al.

Affiliated with

Also associated with

Rating

Non-volatile memory and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4081990