Non-volatile memory and method of fabricating the same

Details Non-volatile memory and method of fabricating the same Non-volatile memory and method of fabricating the same

2005-06-09

2008-03-11

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S325000

Reexamination Certificate

active

07342280

ABSTRACT:
An electrically erasable programmable read-only memory (EEPROM) comprises trench isolation regions whose upper surfaces are recessed compared with an upper surface of the semiconductor substrate, thereby allowing use of all surfaces of a protrusion of the semiconductor substrate between the isolation regions, including the upper surface of the semiconductor substrate, as an active region. Accordingly, the performance of a memory cell can be improved by increasing the size of an active channel region without needing to change the size of a planar unit cell.

REFERENCES:
patent: 6323107 (2001-11-01), Ueda et al.
patent: 6380583 (2002-04-01), Hsieh et al.
patent: 6720611 (2004-04-01), Jang
patent: 7227219 (2007-06-01), Mikolajick
patent: 2005/0009290 (2005-01-01), Yan et al.
patent: 2006/0220088 (2006-10-01), Ueno

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