Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-07-13
2011-12-27
Malsawma, Lex (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S259000, C438S366000, C257SE21619
Reexamination Certificate
active
08084320
ABSTRACT:
A non-volatile memory is described, which includes gate structures, doped regions, second spacers and contact plugs. The gate structures are disposed on the substrate, each of which includes a control gate and a gate dielectric layer. The control gates are disposed on the substrate, and two first spacers are deployed at both sides of each control gate. The gate dielectric layers are disposed between the control gates and the substrate, respectively. Each of the doped regions is formed in the substrate between two adjacent gate structures. The second spacers are disposed on the sidewalls of the gate structures. The contact plugs are formed between two adjacent second spacers, respectively.
REFERENCES:
patent: 6204128 (2001-03-01), Hibi et al.
patent: 6214677 (2001-04-01), Lee
patent: 6251711 (2001-06-01), Fang et al.
patent: 6383921 (2002-05-01), Chan et al.
patent: 6930030 (2005-08-01), Rausch et al.
patent: 7129143 (2006-10-01), Park
patent: 2001/0055842 (2001-12-01), Uh et al.
Chiang Lu-Ping
Liao Hsiu-Han
J.C. Patents
Malsawma Lex
Winbond Electronics Corp.
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