Non-volatile memory and method for fabricating the same

Details Non-volatile memory and method for fabricating the same Non-volatile memory and method for fabricating the same

2006-06-27

2006-06-27

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S591000, C438S593000

Reexamination Certificate

active

07067375

ABSTRACT:
A non-volatile memory is provided. The memory comprises a substrate, a dielectric layer, a conductive layer, an isolation layer, a buried bit line, a tunneling dielectric layer, a charge trapping layer, a barrier dielectric layer and a word line. Wherein, the dielectric layer is disposed on the substrate. The conductive layer is disposed on the dielectric layer. The isolation layer is disposed on the substrate and adjacent to the dielectric layer and the conductive layer. The buried bit line is disposed in the substrate and underneath the isolation layer. The tunneling dielectric layer is disposed on both the substrate and the sidewalls of the conductive layer and the isolation layer. The charge trapping layer is disposed on the tunneling dielectric layer and the barrier dielectric layer is disposed on the charge trapping layer. The word line is disposed on the substrate, crisscrossing with the buried bit line.

REFERENCES:
patent: 6825523 (2004-11-01), Caprara et al.
patent: 6858497 (2005-02-01), Moriya et al.
patent: 6878988 (2005-04-01), Lee et al.

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