Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1993-07-15
1995-04-11
Nguyen, Viet Q.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, 36518909, 36518905, 365 65, H03K 19173, G11C 1122
Patent
active
054065100
ABSTRACT:
A non-volatile memory includes a constant voltage source, a bit line, a memory cell having a first ferroelectric capacitor connected between the bit line and the constant voltage source, a source of a reference voltage, and a latch connected between the bit line and the reference voltage. The latch drives the bit line to the same logic state as the ferroelectric capacitor to read and rewrite the capacitor in a single operation. The reference voltage is provided by a ferroelectric dummy capacitor having an area smaller than the area of the first capacitor but greater than 1/2 the area of the first capacitor.
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McMillan Larry D.
Mihara Takashi
Paz De Araujo Carlos A.
Nguyen Viet Q.
Olympus Optical Co,. Ltd.
Symetrix Corporation
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