Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-22
2008-01-22
Landau, Matthew C. (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S289000, C257SE21423
Reexamination Certificate
active
11097281
ABSTRACT:
In a non-volatile flash memory device, and a method of fabricating the same, the device includes a semiconductor substrate, a source region and a drain region disposed in the semiconductor substrate to be spaced apart from each other, a tunneling layer pattern, a charge trap layer pattern and a shielding layer pattern, which are sequentially stacked on the semiconductor substrate between the source region and the drain region, adjacent to the source region, a first channel region disposed in the semiconductor substrate below the tunneling layer pattern, a gate insulating layer disposed on the semiconductor substrate between the drain region and the first channel region, a second channel region disposed in the semiconductor substrate below the gate insulating layer, a concentration of the second channel region being different from that of the first channel region, and a gate electrode covering the shielding layer pattern and the gate insulating layer.
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Entitled: “Analysis of Enhanced Hot-Carrier Effects in Scaled Flash Memory Devices” P.
Cho In-Wook
Kang Sung-Taeg
Kim Sang-Su
Yang Jeong-Hwan
Landau Matthew C.
Lee & Morse P.C.
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