Non-volatile ferroelectric SRAM

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S145000

Reexamination Certificate

active

06996000

ABSTRACT:
A non-volatile SRAM memory comprising a plurality of memory cells, each memory cell including a SRAM memory cell portion and a ferroelectric memory cell portion including a ferroelectric element, the ferroelectric memory cell portion including a switch system for permitting the ferroelectric element to be isolated from the ferroelectric elements in all other memory cells.

REFERENCES:
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 6731530 (2004-05-01), Miwa et al.
patent: 2004/0141363 (2004-07-01), Ohtsuka et al.
patent: 2004/0196689 (2004-10-01), Ohtsuka et al.

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