Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1998-05-27
1999-11-23
Nelms, David
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, 3651852, 36518511, G11C 1122
Patent
active
059911883
ABSTRACT:
A ferroelectric memory device with plate line segments free from the capacitive plate line segment coupling in a read/write operation, and a method of accessing the memory device. The memory device includes a floating protection circuit for protecting unselected plate line segments from being floated during a read/write operations. The floating protection circuit prevents data disturbance due to the capacitive plate line segment coupling. In a data write method of the memory device, a sense amplifier corresponding to a bit line is activated after a voltage corresponding to a data bit to the bit line is applied. In a data read method of the memory device, the sense amplifier is activated and then a column gate corresponding to the bit line is selected.
REFERENCES:
patent: 5297077 (1994-03-01), Imai et al.
patent: 5373463 (1994-12-01), Jones, Jr.
patent: 5574679 (1996-11-01), Ohtsuki et al.
patent: 5592410 (1997-01-01), Verhaeghe et al.
patent: 5598366 (1997-01-01), Kraus et al.
patent: 5754466 (1998-05-01), Arase
Chung Yeon-Bae
Jeon Byung-Gil
Lam David
Nelms David
Samsung Electronics Co,. Ltd.
LandOfFree
Non-volatile ferroelectric memory with section plate line driver does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile ferroelectric memory with section plate line driver, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile ferroelectric memory with section plate line driver will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1229481