Non-volatile ferroelectric memory with section plate line driver

Static information storage and retrieval – Systems using particular element – Ferroelectric

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Details

365149, 3651852, 36518511, G11C 1122

Patent

active

059911883

ABSTRACT:
A ferroelectric memory device with plate line segments free from the capacitive plate line segment coupling in a read/write operation, and a method of accessing the memory device. The memory device includes a floating protection circuit for protecting unselected plate line segments from being floated during a read/write operations. The floating protection circuit prevents data disturbance due to the capacitive plate line segment coupling. In a data write method of the memory device, a sense amplifier corresponding to a bit line is activated after a voltage corresponding to a data bit to the bit line is applied. In a data read method of the memory device, the sense amplifier is activated and then a column gate corresponding to the bit line is selected.

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patent: 5598366 (1997-01-01), Kraus et al.
patent: 5754466 (1998-05-01), Arase

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