Non-volatile DRAM and a method of making thereof

Details Non-volatile DRAM and a method of making thereof Non-volatile DRAM and a method of making thereof

2007-03-06

2007-03-06

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S386000

Reexamination Certificate

active

10819596

ABSTRACT:
A method of forming a non-volatile DRAM includes, in part, forming a first polysilicon layer above a first dielectric layer to form a control gate of the non-volatile device of the non-volatile DRAM; forming sidewall spacers adjacent the first polysilicon layer; forming a second oxide layer; forming a second polysilicon layer above the second oxide layer, forming lightly doped areas in the body region; forming a second spacer above the body region, forming source and drain regions of the non-volatile device and the MOS transistor of the non-volatile DRAM; forming a third polysilicon layer over portions of the lightly doped areas to form polysilicon landing pads; forming a third dielectric layer above the polysilicon landing pads; and forming a fourth polysilicon layer over the third dielectric layer.

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