Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-01-22
2009-11-17
Ha, Nathan W (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE29197
Reexamination Certificate
active
07618870
ABSTRACT:
The present invention provides, in one embodiment, a transistor (100). The transistor (100) comprises a doped semiconductor substrate (105) and a gate structure (110) over the semiconductor substrate (105), the gate structure (110) having a gate corner (125). The transistor (100) also includes a drain-extended well (115) surrounded by the doped semiconductor substrate (105). The drain-extended well (115) has an opposite dopant type as the doped semiconductor substrate (105). The drain-extended well (115) also has a low-doped region (145) between high-doped regions (150), wherein an edge of the low-doped region (155) is substantially coincident with a perimeter (140) defined by the gate corner (125). Other embodiments of the present invention include a method of manufacturing a transistor (200) and an integrated circuit (300).
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Pan Shanjen
Pendharkar Sameer
Todd James R.
Brady III Wade J.
Garner Jacqueline J.
Ha Nathan W
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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