Non-plasma halogenated gas flow to prevent metal residues

Details Non-plasma halogenated gas flow to prevent metal residues Non-plasma halogenated gas flow to prevent metal residues

1996-03-29

1998-01-20

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566541, 134 13, 118725, 216 37, H01L 21306, C23F 100

Patent

active

057097720

ABSTRACT:
An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process by injecting a halogen-containing gas without a plasma into a processing chamber. The wafer is then exposed to the remnants of the halogen-containing gas in the chamber before the metal is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

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patent: 5520742 (1996-05-01), Ohkase
patent: 5533635 (1996-07-01), Man
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