Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-03-30
2009-06-23
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C257SE21415
Reexamination Certificate
active
07550332
ABSTRACT:
Provided is a non-planar transistor with a multi-gate structure that includes a germanium channel region, and a method of manufacturing the same. The non-planar transistor includes a silicon body and a channel region that covers exposed surfaces of the silicon body. The channel region is formed of a germanium layer and includes a first channel region and a second channel region. In order to form the germanium channel region, a mesa type active region is formed on the substrate, and a germanium layer is formed to cover two sidewalls and an upper surface of the active region.
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Mills & Onello LLP
Ngo Ngan
Samsung Electronics Co,. Ltd.
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