Non-oxidizing touch contact interconnect for semiconductor test

Details Non-oxidizing touch contact interconnect for semiconductor test Non-oxidizing touch contact interconnect for semiconductor test

1997-08-22

2000-03-21

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438 14, 438 18, 438614, H01L 2144, H01L 2166

Patent

active

060402393

ABSTRACT:
An interconnect for testing semiconductor components including dice, wafers, and chip scale packages, is provided. The interconnect includes: a substrate; contact members formed on the substrate configured to make temporary electrical connections with the components; and conductors and bonding pads on the substrate for providing electrical paths to the contact members. The contact members, conductors and bonding pads can be covered with an electrolessly deposited barrier layer, and an electrolessly deposited non-oxidizing layer. The non-oxidizing layer on the contact members forms a touch contact surface for forming low resistance electrical connections with the contacts on the components. Preferred materials for the non-oxidizing layer include palladium, gold, tungsten and platinum. Also provided are a method for fabricating the interconnect, and test systems employing the interconnect.

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