Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1976-02-03

1977-07-26

Wojciechowicz, Edward J.

357 40, 357 34, 357 48, 357 89, H01L 2702, H01L 2972, H01L 2704

Patent

active

040386805

ABSTRACT:
A semiconductor integrated circuit device having a construction of complementary PNP-NPN semiconductor devices in a monolithic integrated form. First and second N type epitaxial layers are formed on a common P type semiconductor substrate. A base region of the PNP transistor is produced by the diffusion of an impurity into the second epitaxial layer. The NPN transistor is formed as low emitter concentration type transistor and a part of the second epitaxial layer serves as the emitter region of the NPN transistor.

REFERENCES:
patent: 3868722 (1975-02-01), Le Can et al.
patent: 3930909 (1976-01-01), Schmitz et al.

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