Non-lithographic process for producing nanoscale features on...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

Reexamination Certificate

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C430S311000, C430S330000, C430S942000, C430S967000

Reexamination Certificate

active

06270946

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a non-lithographic process for producing nanoscale features on a substrate.
BACKGROUND OF THE INVENTION
Optical lithography using projection or direct printing of a mask pattern has been the standard technology for fabricating patterned electronic devices. The size of the components produced depends on the ability of the optics to produce very small images in photo resist or mask materials. This is ultimately limited by the wavelength of the radiation used for exposure. In addition, this method only produces a pattern and not a device.
Various optical or electron beam writing approaches have been developed where a small, focused electron or electromagnetic beam is scanned over the surface of a photo resist, affecting a chemical change in the resist material so that it can be removed by subsequent chemical processes. Alternatively, the resist material may remain in place after subsequent chemical processing. The problem with this method is that there are feature size limitations and cost problems.
In yet another method, a small stylus such as an atomic force microscope (AFM) probe has been used to transfer a small amount of chemical to the surface to be patterned, leaving a very small (tens of nanometers) feature on the surface. This method is limited to the chemicals used and the mechanics of the probes themselves.
An object of the present invention is to provide a method to directly fabricate nanoscale electronic devices without using a mask.
Another object of the present invention is to provide a method that creates smaller mask features without using a mask.
Another object of the present invention is to produce a chemical pattern on a substrate for further build-up of multilayered films.
SUMMARY OF THE INVENTION
The foregoing and additional objects were achieved by the method of the present invention. The method allows for the formation of nanoscale features on a substrate that will result in a chemical environment suitable for the buildup of multilayered films. These layers are built-up using self-assembled monolayers or other non-self-assembled chemical systems. The novel feature of the invention lies in the non-lithographic process for creating the nanoscale features on the substrate. As a result of the process, ultra small features for sensors and electronic devices such as transistors and light emitting diodes for computing, display and communications applications can be created.
When executing the process of the present invention, a substrate having a surface is provided. A first difunctional molecule is also provided. This molecule has a functional group capable of reacting with the surface of the substrate. The first difunctional molecule is applied to the surface of the substrate where the functional group reacts with the substrate. Next, a second difunctional molecule is provided. The second difunctional molecule has a functional group capable of reacting with an unreacted functional group of the first difunctional molecule. The second difunctional molecule may be either: selectively applied on top of the first difunctional molecule using a nanoscale delivery device where it is allowed to react; applied on top of the first difunctional molecule, selectively reacted, and washed to remove any unreacted molecules; or applied on top of the first difunctional molecule and left to react followed by washing the substrate to remove any unreacted molecules. Regardless of the technique, the first difunctional molecule and the second difunctional molecule react to form a patterned layer on the surface of the substrate.
Additional objects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention will be obtained by means of instrumentalities in combinations particularly pointed out in the appended claims.


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