Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Patent
1996-01-03
1998-09-08
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
365200, 3652308, G11C 1300
Patent
active
058055037
ABSTRACT:
An apparatus and method for reprogramming a reconfigurable-logic array is provided whereby a portion of the array can be reconfigured without disrupting the operation of the entire array. Avoiding total disruption of array operation typically requires that the configuration control signals, which determine the configuration of the array, remain substantially non-disrupted during a reprogramming operation. In one embodiment, the reprogramming operates by unique decoding in which an electrical path is established only between the particular storage elements being reprogrammed, thereby avoiding disruption of the configuration control signals provided by other storage elements. In other embodiments, buffers and/or read-modify-write techniques are used to minimize disruption of configuration control signals of storage elements not being reprogrammed.
REFERENCES:
patent: Re23950 (1955-02-01), Bloch et al.
patent: Re34363 (1993-08-01), Freeman
patent: 3461435 (1969-08-01), Hoffman
patent: 3473160 (1969-10-01), Wahlstrom
patent: 3531662 (1970-09-01), Spandorfer
patent: 4020469 (1977-04-01), Manning
patent: 4642487 (1987-02-01), Carter
patent: 4750155 (1988-06-01), Hsieh
patent: 4821233 (1989-04-01), Hsieh
patent: 4918440 (1990-04-01), Futek
patent: 5060145 (1991-10-01), Scheuneman et al.
patent: 5088062 (1992-02-01), Shikata
patent: 5193071 (1993-03-01), Umina et al.
patent: 5459690 (1995-10-01), Rieger et al.
Robert C. Minnick, A Survey of Microcellular Research, Journal of the Association for Computing Machinery, vol. 14, No. 2, Apr. 1967, pp. 203-241.
Atmel Corporation
Nelms David C.
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