Non-activated guard ring for semiconductor devices

Details Non-activated guard ring for semiconductor devices Non-activated guard ring for semiconductor devices

2007-06-12

2007-06-12

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

Reexamination Certificate

active

10935000

ABSTRACT:
A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.

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Development of GaN-Based Electronic Device on Si, by Masataka Yanagihara and Shinichi Twakami.

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