NMOS field effect transistors and methods of forming NMOS field

Details NMOS field effect transistors and methods of forming NMOS field NMOS field effect transistors and methods of forming NMOS field

1997-07-30

2000-02-08

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438306, 438527, 438549, H01L 21336, H01L 2976

Patent

active

060227834

ABSTRACT:
A semiconductor processing method of forming an NMOS field effect transistor includes, a) providing a projecting mesa of semiconductive material from a bulk semiconductor substrate, the mesa defining a semiconductor substrate floor and walls rising upwardly therefrom; b) providing a gate dielectric layer and a gate atop the semiconductive mesa; c) providing a pair of opposing LDD regions within the semiconductive mesa, the respective LDD regions running along one of the mesa walls; and d) providing source and drain diffusion regions within the bulk semiconductor substrate floor which respectively interconnect with the opposing LDD regions of the mesa. NMOS field effect transistors are also disclosed.

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