NMOS electrostatic discharge protection device and method for CM

Details NMOS electrostatic discharge protection device and method for CM NMOS electrostatic discharge protection device and method for CM

1999-02-05

2000-05-16

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438281, 438282, H01L 218234

Patent

active

060636726

ABSTRACT:
MOS functional devices and electrostatic discharge protection devices are formed on a substrate having a relatively low-resistance area beneath the functional devices to inhibit latch-up of the functional devices and a relatively high resistance area beneath each electrostatic protection device to reduce the snapback holding voltage of each electrostatic discharge protection device.

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