Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-02-08
2005-02-08
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S774000, C438S072000, C438S637000, C438S638000, C438S700000
Reexamination Certificate
active
06853043
ABSTRACT:
A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula SiwOxHy:Cz, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 35 and 55, x is between 35 and 55, y is between 4 and 15, z is between 0 and 3 and the atomic percentage of nitrogen in the material is less than or equal to 1 atomic percent.
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Ahn Sang
Bencher Christopher Dennis
M'Saad Hichem
Rathi Sudha
Yeh Wendy H.
Lee Hsien-Ming
Townsend & Townsend & Crew
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