Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-10
2007-07-10
Toledo, Fernando L. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S402000, C257S491000, C438S216000, C438S287000
Reexamination Certificate
active
10988733
ABSTRACT:
A semiconductor structure is provided that includes a Vtstabilization layer between a gate dielectric and a gate electrode. The Vtstabilization layer is capable of stabilizing the structure's threshold voltage and flatband voltage to a targeted value and comprises a nitrided metal oxide, or a nitrogen-free metal oxide, with the proviso that when the Vtstabilization layer comprises a nitrogen-free metal oxide, at least one of the semiconductor substrate or the gate dielectric includes nitrogen. The present invention also provides a method of fabricating such a structure.
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Bojarczuk, Jr. Nestor A.
Cabral, Jr. Cyril
Cartier Eduard A.
Frank Martin M.
Gousev Evgeni P.
Scully , Scott, Murphy & Presser, P.C.
Toledo Fernando L.
Trepp, Esq. Robert M.
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