Adhesive bonding and miscellaneous chemical manufacture – Methods – Surface bonding and/or assembly therefor
Patent
1994-06-08
1996-04-02
Gallagher, John J.
Adhesive bonding and miscellaneous chemical manufacture
Methods
Surface bonding and/or assembly therefor
1562726, 1563086, 1563093, 1566291, 204164, 216 34, 264346, 427399, 428420, B32B 3100
Patent
active
055037046
ABSTRACT:
A process for direct bonding similar or dissimilar materials at low temperatures in which a material surface is rendered hydrophilic and reactive by creating nitrogen based radicals on the surface, the surface is direct bonded to a second surface, and the bonded surfaces are annealed at a temperature below approximately 500.degree. C. A nitrogen based constituent is combined with an activator to render the surface hydrophilic and reactive through ammonia plasma activation or activation by use of hydrofluoric acid.
REFERENCES:
patent: 3409198 (1968-11-01), Peterman
patent: 3477902 (1969-11-01), Tomasino et al.
patent: 3579395 (1971-05-01), Rath
patent: 5215636 (1993-06-01), Dankychev et al.
J. B. Lasky; "Wafer Bonding For Silicon-On-Insulator Techniques"; Jan. 6, 1986; Appl. Phys. Lett. 48 (1).
Peterson, K. et al.; "Silicon Fusion Bonding For Pressure Sensors"; Jun. 1988; Solid State Sensor and Activator Workshop Technical Digest, Hilton Head Island, South Carolina.
Chung, G. S. et al.; "High Resolution Pressure Sensors Fabricated By Silicon Wafer Direct Bonding"; Jun. 6, 1991; Electronics Letters vol. 27, No. 12.
Bower, R. W. et al; "Aligned Wafer Bonding: A Key to Three Dimensional Microstrucures"; May 13, 1991; Journal of Electronics Materials vol. 20, No. 5.
Bower, Robert W. et al; "Design Consideration of a Digital Pressure Sensor Array"; Jun. 24, 1991; Transducers '91-International Conference on Solid State Sensors and Actuators, San Francisco, CA.
Ismail, M. S. et al.; "Digital Pressure-Switch Array with Aligned Silicon Fusion Bonding"; Nov. 1991; J. Micromech. Microeng. 1.
Yamada, A. et al.; "Bonding Silicon Wafer to Silicon Nitride With Spin-On Glass as Adhesive"; Mar. 26, 1987; Electronics Letters, vol. 23, No. 7.
Ismail, M. S. et al.; "Silicon Nitride Direct Bonding"; Jul. 5, 1990; Electronics Letters, Vo. 26, No. 14.
Harendt, C. et al.; "Silicon Direct Bonding for Sensor Applications: Characterization of the Bond Quality"; 1991; Sensors and Actuators A, 25-27.
Yasumoto, H. et al.; "Promissing New Fabrication Process Developed For Stacked LSI's"; Dec. 1984; Technical Digest in IEEE Int. Electron Devices Mtg; San Francisco, CA.
Lodge, Kevin J. et al.; "The Impact of Packaging on the Reliability of Flip-Chip Solder Bonded Devices"; Dec. 1990; IEEE Transactions on Components, Hybrids, and Manufacturing Technology. vol. 13, No. 4.
Bengtsson, S.; "Semiconductor Wafer Bonding: A Review of Interfacial Properties and Applications"; Aug. 1992; Journal of Electronic Materials.
Ismail, M. S. et al; "Polysilicon and Titanium Disilicide-Polycide Fusion Bonding for 3-D Microdevices Applications; Technical Digest, Solid State Sensor and Actuator Workshop", Hilton Head Island, S.C., Jun. 1992.
Meuris, M. et al; "Investigating Techniques To Improve Gate-Oxide Integrity"; May 1992; Microcontamination.
Xu, X.-L. et al.; "Novel Two Step SDB Technology For High-Performance Thin-Film SOI/MOSFET Applications"; Mar. 1989; Electronic Letters, vol. 25, No. 6.
Farrens, S. N. et al.; "Mechanical Testing of Bonded Silicon on Insulator Wafers"; Proceedings of the Materials Research Society, 239B, Materials Research Society Meeting, Boston, MA, Dec. 1991.
Stengl, R. et al.; "A Model for the Silicon Wafer Bonding Process"; Oct. 1989; Jpn. J. Appl. Phys. vol. 28, No. 10.
Lee, R. W. et al.; "Diffusion of Hydrogen and Deuterium in Fused Quartz"; Feb. 15, 1962; The Journal of Chemical Physics, vol. 36, No. 4.
Liau, Z. L. et al.; "Wafer Fusion: A Novel Technique for Optoelectronic Device Fabrication and Monolithic Integration"; Feb. 19, 1990; Appl. Phys. Lett.; vol. 56, No. 8.
Ismail, M. S. et al.; "Platinum Silicide Fusion Bonding"; Jun. 20, 1991; Electronic Letters, vol. 27, No. 13.
Ismail, M. S. et al.; "Technological Consideration of Three Dimensional CMOS Devices Formed with Aligned Wafer Bonding"; proceedings of the First International Symposium on Semiconductor Wafer Bonding Science, Technology and Applications, Electrochemical Society Meeting, Phoenix, AZ, Oct. 13-17, 1991, p. 474.
Tong, Q.-Y. et al.; "Diffusion and Oxide Viscous Flow Mechanism in SDB Process and Silicon Wafer Rapid Thermal Bonding"; May 24, 1990; Electronics Letters, vol. 26, No. 11.
Xu, X-L et al.; "Silicon On Quartz By Solid State Diffusion Bonding (SSDB) Technology"; May 1988 Electronics Letters, vol. 24, No. 11.
Bower Robert W.
Ismail Mohd S.
Roberds Brian E.
Gallagher John J.
O'Banion John P.
The Regents of the University of California
LandOfFree
Nitrogen based low temperature direct bonding does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nitrogen based low temperature direct bonding, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitrogen based low temperature direct bonding will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2013988