Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-01-15
2011-12-27
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S505000, C438S509000, C438S513000, C438S514000, C438S663000, C257SE21170, C257SE21043, C257SE21051, C257SE21054, C257SE21077, C257SE21115, C257SE21134, C257SE21218, C257SE21248, C257SE21267, C257SE21278, C257SE21293, C257SE21370
Reexamination Certificate
active
08084312
ABSTRACT:
A transistor is fabricated upon a semiconductor substrate, where the yield strength or elasticity of the substrate is enhanced or otherwise adapted. A strain inducing layer is formed over the transistor to apply a strain thereto to alter transistor operating characteristics, and more particularly to enhance the mobility of carriers within the transistor. Enhancing carrier mobility allows transistor dimensions to be reduced while also allowing the transistor to operate as desired. However, high strain and temperature associated with fabricating the transistor result in deleterious plastic deformation. The yield strength of the silicon substrate is therefore adapted by incorporating nitrogen into the substrate, and more particularly into source/drain extension regions and/or source/drain regions of the transistor. The nitrogen can be readily incorporated during transistor fabrication by adding it as part of source/drain extension region formation and/or source/drain region formation. The enhanced yield strength of the substrate mitigates plastic deformation of the transistor due to the strain inducing layer.
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Bu Haowen
Chakravarthi Srinivasan
Chidambaram P R
Grider Douglas T.
Khamankar Rajesh
Brady III Wade J.
Garner Jacqueline J.
Nhu David
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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