Nitride semiconductor, method for manufacturing the same and...

Details Nitride semiconductor, method for manufacturing the same and... Nitride semiconductor, method for manufacturing the same and...

2005-02-22

2005-02-22

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S094000, C257S096000

Reexamination Certificate

active

06858877

ABSTRACT:
A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.

REFERENCES:
patent: 6365921 (2002-04-01), Watanabe et al.
patent: 6617607 (2003-09-01), Ito et al.
patent: 20010000733 (2001-05-01), Tomioka
patent: 1104031 (2001-05-01), None
patent: 1107296 (2001-06-01), None
Shuji Nakamura,“UV/Blue/Green InGaN-Based LEDs and Laser Diodes Grown on Epitaxially Laterally Overgrown GaN”, IEICE Trans. Electron, vol. E83-C, No. 4, Apr. 2000, pp. 529-535.

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