Nitride semiconductor growth method, nitride semiconductor...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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C117S089000, C117S102000, C117S105000

Reexamination Certificate

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07083679

ABSTRACT:
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.

REFERENCES:
patent: 4127792 (1978-11-01), Nakata
patent: 4482422 (1984-11-01), McGinn et al.
patent: 4522661 (1985-06-01), Morrison et al.
patent: 4578142 (1986-03-01), Corboy et al.
patent: 4651407 (1987-03-01), Bencuya
patent: 4865685 (1989-09-01), Palmour
patent: 4876210 (1989-10-01), Barnett et al.
patent: 4908074 (1990-03-01), Hosoi et al.
patent: 4912064 (1990-03-01), Kong et al.
patent: 4946547 (1990-08-01), Palmour et al.
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5239188 (1993-08-01), Takeuchi et al.
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5290393 (1994-03-01), Nakamura et al.
patent: 5364815 (1994-11-01), Osada
patent: RE34861 (1995-02-01), Davis et al.
patent: 5389571 (1995-02-01), Takeuchi et al.
patent: 5397736 (1995-03-01), Bauser et al.
patent: 5549747 (1996-08-01), Bozler et al.
patent: 5620557 (1997-04-01), Manabe et al.
patent: 5656832 (1997-08-01), Ohba et al.
patent: 5679152 (1997-10-01), Tischler et al.
patent: 5709745 (1998-01-01), Larkin et al.
patent: 5710057 (1998-01-01), Kenney
patent: 5727008 (1998-03-01), Koga et al.
patent: 5760426 (1998-06-01), Marx et al.
patent: 5764673 (1998-06-01), Kawazu et al.
patent: 5766695 (1998-06-01), Nguyen et al.
patent: 5773369 (1998-06-01), Hu et al.
patent: 5786606 (1998-07-01), Nishio et al.
patent: 5789265 (1998-08-01), Nitta et al.
patent: 5815520 (1998-09-01), Furushima
patent: 5828088 (1998-10-01), Mauk et al.
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5880485 (1999-03-01), Marx et al.
patent: 6051849 (2000-04-01), Davis et al.
patent: 6172417 (2001-01-01), Goossen
patent: 6294440 (2001-09-01), Tsuda et al.
patent: 6377596 (2002-04-01), Tanaka et al.
patent: 6459712 (2002-10-01), Tanaka et al.
patent: 2001/0007242 (2001-07-01), Davis et al.
patent: 2001/0009167 (2001-07-01), Davis et al.
patent: 0 551 721 (1993-07-01), None
patent: 0 852 416 (1998-07-01), None
patent: 5-55631 (1993-03-01), None
patent: 5-343741 (1993-12-01), None
patent: 07-201745 (1995-04-01), None
patent: 7-165498 (1995-06-01), None
patent: 7-201745 (1995-08-01), None
patent: 7-201745 (1995-08-01), None
patent: 7-202265 (1995-08-01), None
patent: 8-64791 (1996-03-01), None
patent: 7-273367 (1999-10-01), None
patent: WO97/11518 (1997-03-01), None
patent: WO 97/11518 (1997-03-01), None
patent: WO 99/44224 (1999-09-01), None
Defendant Nichia America Corporation's Motion for Partial Summary Judgment,North Carolina State University and Cree, Inc., v. Nichia Corporation and Nichia America Corporation, No. 5:00-CV-703-F(2), U.S. District Court for the Eastern District of North Carolina Southern Division, Dec. 11, 2000.
International Search Report, PCT/US99/04346, Jun. 9, 1999.
Lester et al, “High Dislocation Densities in High Efficiency GaN-Based Light-Emitting Diodes”,Appl. Phys. Lett., 66, 1995, pp. 1249-1251.
Nakamura, Shuji and Gerhard Fasol,The Blue Laser Diode: GaN Based Light Emitters and Lasers, Berlin: Springer, 1997, pp. 282-304.
Zheleva et al.,Dislocation Density Reduction Via Lateral Epitaxy in Selectively Grown GaN Structures, Appl. Phys, Lett. vol. 71, No. 17, Oct. 27, 1997, pp. 2472-2474.
Doverspike et al.,The Effect of GaN and AIN Buffer Layers on GaN Film Properties Grown on Both C-Plane and A-Plane Sapphire, Journal of Electronic Materials, vol. 24, No. 4, 1995, pp. 269-273.
Kuznia et al.,Influence of Buffer Layers on the Deposition of High Quality Single Crystal GaN Over Sapphire Substrates, J. Appl. Phys., vol. 73, No. 9, May 1, 1993, pp. 4700-4702.
Watanabe et al.,The Growth of Single Crystalline GaN on a Si Substrate Using AIN As An Intermediate Layer, Journal of Crystal Growth, vol. 128, 1993, pp. 391-396.
Chen et al.,Silicon-on-Insulator: Why, How, and When, AIP Conference Proceedings, vol. 167, No. 1, Sep. 15, 1988, pp. 310-319.
Amano et al.,Metalorganic Vapor Phase Epitaxial Growth of a High Quality GaN Film Using an AIN Buffer Layer, Applied Physics Letters, vol. 48, No. 5, Feb. 3, 1986, pp. 353-355.
Yoshida et al.,Improvements on the Electrical and Luminescent Properties of Reactive Molecular Beam Epitaxially Grown GaN Films by Using AIN-Coated Sapphire Substrates, Applied Physics Letters, vol. 42, No. 5, Mar. 1, 1983, pp. 427-429.
Nakamura,GaN Growth using GaN Buffer Layer, Japanese Journal of Applied Physics, vol. 30, No. 10A, Oct. 1991, pp. L1705-L1707.
International Search Report, PCT/US99/12967, Oct. 18, 1999.
Kapolnek et al., “Anisotropic Epitaxial Lateral Growth in GaN Selective Area Epitaxy”, Appl. Phys. Lett. 71(9), Sep. 1, 1997, pp. 1204-1206.
Usui et al., “Thick GaN Epitaxial Growth With Low Dislocation Density by Hydride Vapor Phase Epitaxy”, Jpn. J. Appl. Phys., vol. 36, Part 2, No. 7B, Jul. 15, 1997, pp. 899-902.
Nam et al., “Growth of GaN and Al0.2Ga0.8N on Patterned Substrates Via Organometallic Vapor Phase Epitaxy”, Jpn. J. Appl. Phys., vol. 36, Part 2, No. 5A, May 1, 1997, pp. 532-535.
Nam et al., “Selective Growth of GaN and Al0.7Ga0.8N on GaN/AIN/6H-SiC(0001)Multilayer Substrates Via Organometallic Vapor Phase Epitaxy”, Proceedings MRS, Dec. 1996, 6 pp.
Kapolnek et al., “Selective Area Epitaxy of GaN for Electron Field Emission Devices”, Journal of Crystal Growth, 5451, 1996, pp. 1-4.
Weeks et al, “GaN Thin Films Deposited Via Organometallic Vapor Phase Epitaxy on α(6H)-SiC(0001)Using High-Temperature Monocrystalline AIN Buffer Layers”, Appl. Phys. Lett. 67(3), Jul. 17, 1995, pp. 401-403.
Kato et al., “Selective Growth of Wurtzite GaN and AlxGa1-xN on GaN/Sapphire Substrates by Metalorganic Vapor Phase Epitaxy”, Journal of Crystal Growth, 144, 1994, pp. 133-140.
Yamaguchi et al, “Lateral Supply Mechanisms in Selective Metalorganic Chemical Vapor Deposition”, Jpn. Appl. Phys., vol. 32 (1993), pp. 1523-1527.
Nakamura et al.,InGaN/GaN/AlGaN-Based Laser Diodes With Modulation-Doped Strained-Layer Superlattices, Jpn. J. Appl. Phys., vol. 36, Dec 1, 1997, pp. L1568-L1571.
Linthicum et al.,Pendeoepitaxy of Gallium Nitride Thin Films, Applied Physics Letters, vol. 75, No. 2, Jul. 12, 1999, pp. 196-198.
Zheleva et al.,Pendeo-Epitaxy: A New Approach for Lateral Growth of Gallium Nitride Films, Journal of Electronic Materials, vol. 28, No. 4, Feb. 1999, pp. L5-L8.
Zheleva et al.,Pendeo-Epitaxy-A New Approach for Lateral Growth of GaN Structures, MRS Internet Journal of Nitride Semiconductor Research, 1999, Online!, vol. 4S1, No. G3.38, Nov. 30, 1998-Dec. 4, 1998.
Nakamura et al.,InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates With a Fundamental Transverse Mode, Jpn. J. Appl. Phys., vol. 37, Sep. 15, 1998, pp. L1020-L1022.
Marchand et al.,Microstructure of GaN Literally Overgrown by Metalorganic Chemical Vapor Deposition, Applied Physics Letters, vol. 73, No. 6, Aug. 10, 1998, pp. 747-749.
Sakai et al.,Transmission Electron Microscopy of Defects in GaN Films Formed by Epitaxial Lateral Overgrowth, vol. 73, No. 4, Jul. 27, 1998, pp. 481-483.
Nakamura et al.,High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates, Jpn. J. Appl. Phys., vol. 37, Mar. 15, 1998, pp. L309-L312.
Nam et al.,Lateral Epitaxial Overgrowth of GaN Films on SiO2Areas Via Metalorganic Vapor Phase Epitaxy, Journal of Elec

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