Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2007-12-07

2009-06-23

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Group iii-v compound

C257S076000, C257SE29091

Reexamination Certificate

active

07550821

ABSTRACT:
A nitride semiconductor device includes: a substrate; a nitride semiconductor layer formed on a main surface of the substrate and having a channel region through which electrons drift in a direction parallel to the main surface; and a plurality of first electrodes and a plurality of second electrodes formed spaced apart from each other on an active region in the nitride semiconductor layer. An interlayer insulating film is formed on the nitride semiconductor layer. The interlayer insulating film has openings that respectively expose the first electrodes and has a planarized top surface. A first electrode pad is formed in a region over the active region in the interlayer insulating film and is electrically connected to the exposed first electrodes through the respective openings.

REFERENCES:
patent: 2003/0181017 (2003-09-01), Mikawa et al.
patent: 2006/0157804 (2006-07-01), Ueda
patent: 2007/0020799 (2007-01-01), Choi et al.
Saito et al. “High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior”, IEEE Transaction on Electron Devices, vol. 50, No. 12, pp. 2528-2531, Dec. 2003.

Affiliated with

Also associated with

Rating

Nitride semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4106588