Nitride layer on a gate stack

Details Nitride layer on a gate stack Nitride layer on a gate stack

2007-08-14

2007-08-14

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000

Reexamination Certificate

active

10185646

ABSTRACT:
A method of making a semiconductor structure includes depositing a nitride layer, on a metallic layer, by PECVD. The metallic layer is on a gate layer containing silicon, and the gate layer is on a semiconductor substrate.

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